Ivan Maximov
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- 2009
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Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article
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Mark
Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2008
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Mark
Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.052073-052073(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP
(
- Contribution to journal › Article
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Mark
A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
(
- Contribution to journal › Article
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Mark
A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
(
- Contribution to journal › Article
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Mark
Electrical properties of self-assembled branched InAs nanowire junctions
(
- Contribution to journal › Article
- 2007
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Mark
Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Frequency mixing and phase detection functionalities of three-terminal ballistic junctions
(
- Contribution to journal › Article
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Mark
Sulfur passivation for ohmic contact formation to InAs nanowires
(
- Contribution to journal › Article