Ivan Maximov
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- 2005
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Mark
Nanometer-scale two-terminal semiconductor memory operating at room temperature
(
- Contribution to journal › Article
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Mark
Microwave detection at 110 GHz by nanowires with broken symmetry
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- Contribution to journal › Article
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Mark
Sulfur passivation for formation of Ohmic contacts to InAs nanowire devices
2005) 31st Intl Conf Micro- and Nano-Engineering, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Electrical contacts technology for single nanowires and molecules
2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Nanoimprint technology for fabrication of tunable grating structures
2005) 31st Intl Conf Micro- and Nano-Engineering, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
An alignment procedure for nanoimprint lithography at the sub-20 nm level
2005) 49th Intl Conf on Electron, Ion, and Photon Beam Technol and Nanofabr, Orlando, Fl, USA (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Lithography of high spatial density biosensor structures with sub-100 nm spacing by MeV proton beam writing with minimal proximity effect
(
- Contribution to journal › Article
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Mark
Nanoelectrochemical transducers for (bio-) chemical sensor applications fabricated by nanoimprint lithography
(
- Contribution to journal › Article
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Mark
Novel nanoelectronic triodes and logic devices with TBJs
(
- Contribution to journal › Article
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Mark
Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding