Ivan Maximov
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- 2003
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Mark
Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
(
- Contribution to journal › Article
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Mark
Lift-off process for nanoimprint lithography
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Fluorescence microscopy for quality control in nanoimprint lithography
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Molecular cluster based nanoelectronics
2003) Proceedings of the Symposium and Summer School on: Nano and Giga Challenges in Microelectronics Research and Opportunities in Russia In Microelectronic Engineering 69. p.536-548(
- Contribution to journal › Article
-
Mark
The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards
(
- Contribution to journal › Article
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Mark
Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems.
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2002
-
Mark
High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
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- Contribution to journal › Article
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Mark
Polymer stamps for nanoimprinting
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- Contribution to journal › Article
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Mark
Improving stamps for 10 nm level wafer scale nanoimprint lithography
(
- Contribution to journal › Article
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Mark
Fabrication of Si-based nanoimprint stamps with sub-20 nm features
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding