Lars-Erik Wernersson
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- 2006
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Mark
Vertical wrap-gated nanowire transistors
(
- Contribution to journal › Article
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Mark
Vertical high-mobility wrap-gated InAs nanowire transistor
(
- Contribution to journal › Article
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Mark
Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
(
- Contribution to journal › Article
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Mark
InAsP/InAs nanowire heterostructure field effect transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InAs wrap-gate FETs
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical InAs nanowire wrap-gate FETs
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical high mobility wrap-gated InAs nanowire transistors
2006) 63rd Annual Device Res Conf, Santa Barbara, Ca, USA (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Nanowire transistors: fabrication, performance and applications
2006) Intl Workshop Challenges and Opportunities in Nanoarchitectures, Halmstad, Sweden (2006), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Nanowire field effect transistor
2006) Intl Conf on Solid State Devices and Materials, Kanagawa, Japan (2006), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
-
Mark
A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
(
- Contribution to journal › Article