Lars-Erik Wernersson
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- 2002
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Mark
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
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- Contribution to journal › Article
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Mark
A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
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- Contribution to journal › Article
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Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
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- Contribution to journal › Article
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Mark
Designed emitter states in resonant tunneling through quantum dots
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- Contribution to journal › Article
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Mark
Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics
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- Contribution to journal › Article
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Mark
Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
(
- Contribution to journal › Article
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Mark
Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
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- Contribution to journal › Article
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Mark
Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field
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- Contribution to journal › Article
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Mark
A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
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- Contribution to journal › Article