Sebastian Lehmann
41 – 60 of 115
- show: 20
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2019
-
Mark
Short-range versus long-range structure in Cu(In,Ga)Se2, Cu(In,Ga)3Se5, and Cu(In,Ga)5Se8
(
- Contribution to journal › Article
-
Mark
Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers
(
- Contribution to journal › Article
- 2018
-
Mark
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Spectroscopy and level detuning of few-electron spin states in parallel InAs quantum dots
(
- Contribution to journal › Article
-
Mark
Temperature dependent electronic band structure of wurtzite GaAs nanowires
(
- Contribution to journal › Article
-
Mark
Branched InAs nanowire growth by droplet confinement
(
- Contribution to journal › Article
-
Mark
Kinetic Engineering of Wurtzite and Zinc-Blende AlSb Shells on InAs Nanowires
(
- Contribution to journal › Article
-
Mark
Tuning the Two-Electron Hybridization and Spin States in Parallel-Coupled InAs Quantum Dots
(
- Contribution to journal › Article
-
Mark
Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires
(
- Contribution to journal › Article
-
Mark
Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization
(
- Contribution to journal › Article
-
Mark
Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Radial band bending at wurtzite–zinc-blende–GaAs interfaces
(
- Contribution to journal › Article
- 2017
-
Mark
Parallel-Coupled Quantum Dots in InAs Nanowires
(
- Contribution to journal › Article
-
Mark
Bipolar Photothermoelectric Effect Across Energy Filters in Single Nanowires
(
- Contribution to journal › Article
-
Mark
Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires
(
- Contribution to journal › Article
-
Mark
Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
(
- Contribution to journal › Article
-
Mark
Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit
(
- Contribution to journal › Article
-
Mark
Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage
(
- Contribution to journal › Article
-
Mark
Imaging Atomic Scale Dynamics on III-V Nanowire Surfaces during Electrical Operation
(
- Contribution to journal › Article
-
Mark
Thermodynamic stability of gold-assisted InAs nanowire growth
(
- Contribution to journal › Article