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- 2013
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Mark
1/f-noise in Vertical InAs Nanowire Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
-
Mark
Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Aerosol synthesis of semiconductor nanowires
2013) European Aerosol Conference (EAC) 2013(
- Contribution to conference › Abstract
- 2012
-
Mark
Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
(
- Contribution to journal › Article
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Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
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Mark
Single InAs/GaSb Nanowire Low-Power CMOS Inverter
2012) In Nano Letters(
- Contribution to journal › Article
-
Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
-
Mark
Vertical oxide nanotubes connected by subsurface microchannels
(
- Contribution to journal › Article