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<iframe src="https://lup.lub.lu.se/search/publication?embed=1&q=author%3D%22Chen%2C+Jr+Tai%22+or+(documentType+any+%22bookEditor+conferenceEditor%22+and+editor%3D%22Chen%2C+Jr+Tai%22)&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
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2025
Mark Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(0001̄)
Zhang, Hengfang ; Chen, Jr Tai ; Papamichail, Alexis ; Persson, Ingemar ; Tran, Dat Q. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2025) In Journal of Crystal Growth 651.
- Contribution to journal › Article
2024
Mark Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
Castillo, Ragnar Ferrand Drake Del ; Chen, Ding Yuan ; Chen, Jr Tai ; Thorsell, Mattias ; Darakchieva, Vanya ^LU and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(6). p.3596-3602
- Contribution to journal › Article
Mark Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
Armakavicius, Nerijus ; Kühne, Philipp ; Papamichail, Alexis ; Zhang, Hengfang ; Knight, Sean ^LU ; Persson, Axel ; Stanishev, Vallery ; Chen, Jr Tai ; Paskov, Plamen and Schubert, Mathias ^LU , et al. (2024) In Materials 17(13).
- Contribution to journal › Article
2023
Mark High-quality N-polar GaN optimization by multi-step temperature growth process
Zhang, Hengfang ; Chen Jr., Tai ; Papamichail, Alexis ; Persson, Ingemar ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Journal of Crystal Growth 603.
- Contribution to journal › Article
Mark Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
Chen, Ding Yuan ; Persson, Axel R. ; Darakchieva, Vanya ^LU ; Persson, Per O.Å. ; Chen, Jr Tai and Rorsman, Niklas (2023) In Semiconductor Science and Technology 38(10).
- Contribution to journal › Article
Mark Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
Zhang, Hengfang ; Persson, Ingemar ; Chen Jr., Tai ; Papamichail, Alexis ; Tran, Dat Q. ; Persson, Per O. Å. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Crystal Growth and Design 23(2). p.1049-1056
- Contribution to journal › Article
Mark Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Vidarsson, Arnar M. ; Persson, Axel R. ; Chen, Jr Tai ; Haasmann, Daniel ; Hassan, Jawad Ul ; Dimitrijev, Sima ; Rorsman, Niklas ; Darakchieva, Vanya ^LU and Sveinbjörnsson, Einar I. (2023) In APL Materials 11(11).
- Contribution to journal › Article
2022
Mark Impact of in situ NH₃ pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Chen, Ding-Yuan ; Persson, Axel R ; Wen, Kai-Hsin ; Sommer, Daniel ; Grünenpütt, Jan ; Blanck, Hervé ; Thorsell, Mattias ; Kordina, Olof ; Darakchieva, Vanya ^LU and Persson, Per O Å , et al. (2022) In Semiconductor Science and Technology 37(3).
- Contribution to journal › Article
2020
Mark N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC : Effects of substrate orientation on the polarity, surface morphology and crystal quality
Zhang, Hengfang ; Paskov, Plamen P. ; Kordina, Olof ; Chen, Jr Tai and Darakchieva, Vanya ^LU (2020) In Physica B: Condensed Matter 580.
- Contribution to journal › Article

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