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2025
Mark Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD
Kim, Minho ; Papamichail, Alexis ; Tran, Dat Q. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2025) In Applied Physics Letters 127(3).
- Contribution to journal › Article
Mark Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(0001̄)
Zhang, Hengfang ; Chen, Jr Tai ; Papamichail, Alexis ; Persson, Ingemar ; Tran, Dat Q. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2025) In Journal of Crystal Growth 651.
- Contribution to journal › Article
2024
Mark Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
Sundarapandian, Balasubramanian ; Tran, Dat Q. ; Kirste, Lutz ; Straňák, Patrik ; Graff, Andreas ; Prescher, Mario ; Nair, Akash ; Raghuwanshi, Mohit ; Darakchieva, Vanya ^LU and Paskov, Plamen P. , et al. (2024) In Applied Physics Letters 124(18).
- Contribution to journal › Article
Mark Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
Armakavicius, Nerijus ; Knight, Sean ; Kühne, Philipp ; Stanishev, Vallery ; Tran, Dat Q. ; Richter, Steffen ^LU ; Papamichail, Alexis ; Stokey, Megan ; Sorensen, Preston and Kilic, Ufuk , et al. (2024) In APL Materials 12(2).
- Contribution to journal › Article
2023
Mark On the thermal conductivity anisotropy in wurtzite GaN
Tran, Dat Q. ; Paskova, Tania ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In AIP Advances 13(9).
- Contribution to journal › Article
Mark Thermal conductivity of Sc_xAl_1−xN and Y_xAl_1−xN alloys
Tran, Dat Q. ; Tasnádi, Ferenc ; Žukauskaitė, Agnė ; Birch, Jens ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In Applied Physics Letters 122(18).
- Contribution to journal › Article
Mark Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
Zhang, Hengfang ; Persson, Ingemar ; Chen Jr., Tai ; Papamichail, Alexis ; Tran, Dat Q. ; Persson, Per O. Å. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Crystal Growth and Design 23(2). p.1049-1056
- Contribution to journal › Article
2022
Mark Thermal conductivity of Al_xGa_1−xN (0≤x≤1) epitaxial layers
Tran, Dat Q. ; Carrascon, Rosalia D. ; Iwaya, Motoaki ; Monemar, Bo ^LU ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2022) In Physical Review Materials 6(10).
- Contribution to journal › Article
Mark Enhancement of 2DEG effective mass in AlN/Al_0.78Ga_0.22N high electron mobility transistor structure determined by THz optical Hall effect
Kühne, Philipp ; Armakavicius, Nerijus ; Papamichail, Alexis ; Tran, Dat Q. ; Stanishev, Vallery ; Schubert, Mathias ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2022) In Applied Physics Letters 120(25).
- Contribution to journal › Article
Mark Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD
Gogova, Daniela ; Ghezellou, Misagh ; Tran, Dat Q. ; Richter, Steffen ^LU ; Papamichail, Alexis ; Hassan, Jawad Ul ; Persson, Axel R. ^LU ; Persson, Per O. Å. ; Kordina, Olof and Monemar, Bo ^LU , et al. (2022) In AIP Advances 12(5).
- Contribution to journal › Article

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