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- 2019
-
Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
Hellenbrand, Markus LU ; Kilpi, Olli-Pekka LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2019)
In Microelectronic Engineering
- Contribution to journal › Article
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
Kilpi, Olli Pekka LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars Erik
LU
(2019)
In IEEE Journal of the Electron Devices Society
7.
p.70-75
- Contribution to journal › Article
- 2018
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2018)
In IEEE Electron Device Letters
39(7).
p.943-946
- Contribution to journal › Letter
-
Mark
Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2018)
In Nanotechnology
29(43).
- Contribution to journal › Article
-
Mark
Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2018)
76th Device Research Conference
p.137-138
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
- Contribution to journal › Article
-
Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2018)
Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars Erik
LU
(2018)
In IEEE Electron Device Letters
39(7).
p.1089-1091
- Contribution to journal › Article