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- 2023
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Mark
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
(
- Contribution to journal › Article
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article
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Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
(
- Contribution to journal › Article
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Mark
On the thermal conductivity anisotropy in wurtzite GaN
(
- Contribution to journal › Article
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Mark
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
(
- Contribution to journal › Article
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Mark
THz Spectroscopic Electron Paramagnetic Resonance of the Fe3+Defect in GaN
2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
- 2022
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Mark
Infrared-active phonon modes and static dielectric constants in -(AlxGa 1-x)2O3(0.18 ≤ x ≤ 0.54) alloys
(
- Contribution to journal › Article
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Mark
Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry : The magnetic response of the nitrogen defect in 4H-SiC
(
- Contribution to journal › Article
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Mark
Infrared dielectric functions and Brillouin zone center phonons of
(
- Contribution to journal › Article