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- 2012
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Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
- Contribution to journal › Article
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Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
- Contribution to journal › Article
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Mark
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
- Contribution to journal › Article
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Mark
A cathodoluminescence study of the influence of the seed particle preparation method on the optical properties of GaAs nanowires.
- Contribution to journal › Article
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Mark
Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
- Contribution to journal › Article
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Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
(2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
- Contribution to journal › Article
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Mark
High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
- Contribution to journal › Article
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Mark
Growth of InAs/InP core-shell nanowires with various pure crystal structures.
- Contribution to journal › Article
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Mark
Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
- Contribution to journal › Article
