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- 2023
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
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Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
(
- Contribution to journal › Article
- 2022
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Mark
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
(
- Contribution to journal › Article