Publications | Lund University Publications

81 – 90 of 195

show: 10
|
sort: year (new to old)

News feed Embed this list Save this search Mark all Export

Cancel

Embed this list

copy and paste the html snippet below into your own page:

<iframe src="https://lup.lub.lu.se/search/publication?embed=1&q=author+exact+ftf-eli+or+(documenttype+any+%22bookEditor+conferenceEditor%22+and+editor+exact+ftf-eli)&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
  width="100%"
  height="400"
  allowtransparency="true"
  frameborder="0">
</iframe>

« previous
1
…
8
9
10
11
…
20
next »

2015
Mark Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2015) Compound Semiconductor Week 2015
- Contribution to conference › Paper, not in proceeding
Mark III-V Heterostructure Nanowire Tunnel FETs
Lind, Erik ^LU ; Memisevic, Elvedin ^LU ; Dey, Anil ^LU and Wernersson, Lars-Erik ^LU (2015) In IEEE Journal of the Electron Devices Society 3(3). p.96-102
- Contribution to journal › Article
Mark High Frequency InGaAs Nanowire MOSFETs
Lind, E. ^LU (2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2014
Mark Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
Berg, Martin ^LU ; Persson, Karl-Magnus ^LU ; Lind, Erik ^LU ; Sjöland, Henrik ^LU and Wernersson, Lars-Erik ^LU (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
Johansson, Sofia ^LU ; Memisevic, Elvedin ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) In IEEE Electron Device Letters 35(5). p.518-520
- Contribution to journal › Article
Mark High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
Wang, C. H. ; Doornbos, G. ; Astromskas, G. ; Vellianitis, G. ; Oxland, R. ; Holland, M. C. ; Huang, M. L. ; Lin, C. H. ; Hsieh, C. H. and Chang, Y. S. , et al. (2014) In AIP Advances 4(4).
- Contribution to journal › Article
Mark RF and DC Analysis of Stressed InGaAs MOSFETs
Roll, Guntrade ^LU ; Lind, Erik ^LU ; Egard, Mikael ; Johansson, Sofia ^LU ; Ohlsson, Lars ^LU and Wernersson, Lars-Erik ^LU (2014) In IEEE Electron Device Letters 35(2). p.181-183
- Contribution to specialist publication or newspaper › Specialist publication article
Mark InAs nanowire MOSFET differential active mixer on Si-substrate
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Sjöland, Henrik ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2014) In Electronics Letters 50(9). p.682-682
- Contribution to journal › Article
Mark In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
Zota, Cezar ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) 72nd Annual Device Research Conference (DRC) p.209-210
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
Zota, Cezar ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) In IEEE Electron Device Letters 35(3). p.342-344
- Contribution to journal › Article

« previous
1
…
8
9
10
11
…
20
next »

your query:: Remove author: Lind, Erik (LU)