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- 2003
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Mark
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
(
- Contribution to journal › Article
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Mark
Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots
(
- Contribution to journal › Article
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Mark
The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards
(
- Contribution to journal › Article
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Mark
Heterostructures incorporated in one-dimensional semiconductor materials and devices
(
- Chapter in Book/Report/Conference proceeding › Book chapter
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Mark
One dimensional heterostructures and resonant tunneling in III-V nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions
(
- Contribution to journal › Article
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Mark
Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces
(
- Contribution to journal › Article
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Mark
Single-electron transistors in heterostructure nanowires.
(
- Contribution to journal › Article
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Mark
Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
(
- Contribution to journal › Article
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Mark
Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
(
- Contribution to journal › Article