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- 2014
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Mark
Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
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Hard X-ray Detection Using a Single nm Diameter Nanowire
(
- Contribution to journal › Article
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Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
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- Contribution to journal › Article
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Mark
Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
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- Contribution to journal › Article
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Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
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- Contribution to journal › Article
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III-V compound semiconductor transistors-from planar to nanowire structures
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- Contribution to journal › Article
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Mark
III-V Nanowire MOSFETs in RF-Applications
2014) Symposium on State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS) held during the 226th Meeting of the Electrochemical-Society 64(17). p.69-73(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires.
(
- Contribution to journal › Article
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Mark
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
(
- Contribution to journal › Article