1 – 33 of 33
- show: 250
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2013
-
Mark
Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration
(
- Contribution to journal › Article
-
Mark
Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2012
-
Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
-
Mark
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
(
- Contribution to journal › Article
-
Mark
Electron Tunneling and Field-Effect Devices in mm-Wave Circuits
2012)(
- Thesis › Doctoral thesis (compilation)
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
- 2011
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
-
Mark
Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
(
- Contribution to journal › Article
-
Mark
Impulse-based 4 Gbit/s radio link at 60 GHz
(
- Contribution to journal › Article
-
Mark
60 GHz impulse radio measurements
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
2011) IEEE International Electron Devices Meeting (IEDM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
2011) 69th Device Research Conference, DRC 2011(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
-
Mark
Tunneling-based devices and circuits
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Contribution to journal › Published meeting abstract
-
Mark
Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Coherent V-Band Pulse Generator for Impulse Radio BPSK
(
- Contribution to journal › Article
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Oscillator for 60 GHz Super Regenerative Receiver
(
- Contribution to journal › Published meeting abstract
-
Mark
A 12.5 Gpulses/s 60 GHz bi-phase wavelet generator
2010) 34th International European Workshop on Compound Semiconductor Devices and Integrated Circuits(
- Contribution to conference › Abstract
- 2009
-
Mark
20 GHz gated tunnel diode based UWB pulse generator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
20 GHz Wavelet Generator Using a Gated Tunnel Diode
(
- Contribution to journal › Article
-
Mark
Gated tunnel diode in oscillator applications with high frequency tuning
(
- Contribution to journal › Article
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Ultra-Wideband Impulse Radio Transmitter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2008
-
Mark
Gated tunnel diode pulse generator
2008) GigaHertz Symposium In Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology p.37-37(
- Contribution to journal › Published meeting abstract
- 2007
-
Mark
High Tuning-Range VCO Using a Gated Tunnel Diode
2007) 2007 International Conference on Solid State Materials and Devices In [Publication information missing] p.798-799(
- Contribution to journal › Published meeting abstract
-
Mark
Pulse Generator with Gated Tunnel Diode
2007) Swedish System-on-Chip Conference 2007 (SSoCC’07)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding