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- 2024
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Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
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- Contribution to journal › Article
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Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
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- Contribution to journal › Article
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Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
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- Contribution to journal › Article
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Bloch equations in terahertz magnetic-resonance ellipsometry
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- Contribution to journal › Article
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High-field/high-frequency electron spin resonances of Fe-doped β-Ga2 O3 by terahertz generalized ellipsometry : Monoclinic symmetry effects
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- Contribution to journal › Article
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Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
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- Contribution to journal › Article
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Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
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- Contribution to journal › Article
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Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
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- Contribution to journal › Article
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High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
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- Contribution to journal › Article
- 2023
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Mark
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
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- Contribution to journal › Article