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- 2011
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Mark
Transient studies on InAs/HfO2 nanowire capacitors
- Contribution to journal › Article
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Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
- Contribution to journal › Article
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Mark
Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
- Contribution to journal › Article
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Mark
Picosecond time-resolved x-ray refectivity of a laser-heated amorphous carbon film
- Contribution to journal › Article
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Mark
InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
- Contribution to journal › Article
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Mark
Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells
- Contribution to journal › Article
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Mark
The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
- Contribution to journal › Article
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Mark
Tetrahedral chalcopyrite quantum dots for solar-cell applications
- Contribution to journal › Article
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Mark
Mixing thermodynamics of TM1-xGdxN (TM=Ti, Zr, Hf) from first principles
- Contribution to journal › Article
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Mark
Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
- Contribution to journal › Article
