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- 2015
-
Mark
Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%
- Contribution to journal › Article
- 2014
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
- Contribution to journal › Article
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
- Contribution to journal › Article
- 2013
-
Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
- Contribution to journal › Article
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
- Contribution to journal › Article
- 2012
-
Mark
1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
- Contribution to journal › Article
-
Mark
Performance Evaluation of III–V Nanowire Transistors
- Contribution to journal › Article
- 2009
-
Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
- Contribution to journal › Article
- 2008
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
- Contribution to journal › Article
-
Mark
Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
- Contribution to journal › Debate/Note/Editorial
