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- 2017
-
Mark
Ground State Depletion Nanoscopy Resolves Semiconductor Nanowire Barcode Segments at Room Temperature
(
- Contribution to journal › Article
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55(
- Contribution to journal › Article
-
Mark
Bias-dependent spectral tuning in InP nanowire-based photodetectors
(
- Contribution to journal › Article
-
Mark
Phase diagrams for understanding gold-seeded growth of GaAs and InAs nanowires
(
- Contribution to journal › Article
-
Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
2017) p.38-41(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Bending and Twisting Lattice Tilt in Strained Core-Shell Nanowires Revealed by Nanofocused X-ray Diffraction
(
- Contribution to journal › Article
-
Mark
InP/InAsP Nanowire-Based Spatially Separate Absorption and Multiplication Avalanche Photodetectors
(
- Contribution to journal › Article
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
- 2016
-
Mark
Doping evaluation of InP nanowires for tandem junction solar cells
(
- Contribution to journal › Article
-
Mark
Performance of GaAs Nanowire Array Solar Cells for Varying Incidence Angles
(
- Contribution to journal › Article