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- 2013
-
Mark
Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires
- Contribution to journal › Article
- 2008
-
Mark
GaAs/GaSb nanowire heterostructures grown by MOVPE
- Contribution to journal › Article
-
Mark
High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
- Contribution to journal › Article
-
Mark
Growth, Physics, and Device Applications of InAs-based Nanowires
(2008)
- Thesis › Doctoral thesis (compilation)
- 2005
-
Mark
Epitaxial growth of semiconductor nanowires
(2005)
- Thesis › Doctoral thesis (compilation)
- 2004
-
Mark
Electrical properties of InAs-based nanowires
(2004) Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials 723. p.449-452
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Semiconductor nanowires for 0D and 1D physics and applications
- Contribution to journal › Article
-
Mark
Electron Transport in Semiconductor Nanowires
(2004)
- Thesis › Doctoral thesis (compilation)
- 2002
-
Mark
Boundary conditions in the envelope function approximation as applied to semiconductor heterostructures: The multi-band case
- Contribution to journal › Article
-
Mark
Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
(2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
