61 – 70 of 158
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2017
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
-
Mark
Atomic Scale Characterization of III-V Nanowire Surfaces
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit
(
- Contribution to journal › Article
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
-
Mark
X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire
(
- Contribution to journal › Article
-
Mark
Carrier Recombination Processes in Gallium Indium Phosphide Nanowires
(
- Contribution to journal › Article
-
Mark
Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Growth of wurtzite AlxGa1-xP nanowire shells and characterization by Raman spectroscopy
(
- Contribution to journal › Article