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- 2023
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Mark
Low temperature atomic hydrogen annealing of InGaAs MOSFETs
(
- Contribution to journal › Article
- 2018
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Mark
Nanobeam X-ray Fluorescence Dopant Mapping Reveals Dynamics of in Situ Zn-Doping in Nanowires
(
- Contribution to journal › Article
-
Mark
A simple electron counting model for half-Heusler surfaces
(
- Contribution to journal › Article
- 2015
-
Mark
Atomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth
(
- Contribution to journal › Article
- 2014
-
Mark
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
(
- Contribution to journal › Article
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Mark
Real-time studies of the atomic layer deposition of metal oxides using Ambient pressure x-ray photoelectron spectroscopy
2014) APS March Meeting, 2014(
- Contribution to conference › Abstract
- 2013
-
Mark
Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
(
- Contribution to journal › Article
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Mark
Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)
(
- Contribution to journal › Article
- 2012
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Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
-
Mark
Polytypic InAs Nanowire Studies Using Scanning Tunneling Microscopy
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract