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- 2020
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Mark
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
(
- Contribution to journal › Article
- 2019
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Mark
Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs
(
- Contribution to journal › Article
- 2017
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Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
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- Contribution to journal › Article
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Mark
InGaAs tri-gate MOSFETs with record on-current
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
Doping evaluation of InP nanowires for tandem junction solar cells
(
- Contribution to journal › Article
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Mark
InP nanowire p-type doping via Zinc indiffusion
(
- Contribution to journal › Article
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Mark
InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding