Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
Athle, Robin LU ; Blom, Theodor ; Irish, Austin LU ; Persson, Anton E.O. LU
; Wernersson, Lars Erik
LU
; Timm, Rainer
LU
and Borg, Mattias
LU
(2022)
In Advanced Materials Interfaces
9(27).
- Abstract
Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes. For integration on III–V semiconductors, this approach can severely degrade the sensitive HZO/III–V interface. To evaluate whether a reduced thermal budget can improve the interface quality, millisecond duration thermal anneals are utilized using a flash lamp annealer (FLA) on HZO/InAs capacitors. Through thorough electrical characterization such as polarization hysteresis, endurance, and capacitance-voltage measurements, as well as synchrotron-based chemical interface characterization, the FLA and RTP treatments are compared and the... (More)
Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes. For integration on III–V semiconductors, this approach can severely degrade the sensitive HZO/III–V interface. To evaluate whether a reduced thermal budget can improve the interface quality, millisecond duration thermal anneals are utilized using a flash lamp annealer (FLA) on HZO/InAs capacitors. Through thorough electrical characterization such as polarization hysteresis, endurance, and capacitance-voltage measurements, as well as synchrotron-based chemical interface characterization, the FLA and RTP treatments are compared and the FLA results are found in lower interface defect density and higher endurance, but also have generally lower remanent polarization (Pr) compared to RTP. Additionally, ways to achieve high Pr and low interface defect density using multiple lower energy flashes, as well as by pre-crystallization during the ALD growth step are investigated. Using FLA, Pr exceeding 20 µC cm−2 is achieved, with extended endurance properties compared to RTP treatment and a considerably decreased defect density, indicative of a higher quality HZO/InAs interface. This work presents valuable insight into the successful integration of ferroelectric HZO on low thermal budget III–V semiconductors.
(Less)
- author
- Athle, Robin
LU
; Blom, Theodor
; Irish, Austin
LU
; Persson, Anton E.O.
LU
; Wernersson, Lars Erik
LU
; Timm, Rainer
LU
and Borg, Mattias
LU
- organization
- publishing date
- 2022
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- CMOS integration, ferroelectrics, hafnium oxide, III-V, thin films
- in
- Advanced Materials Interfaces
- volume
- 9
- issue
- 27
- article number
- 2201038
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- scopus:85136489999
- ISSN
- 2196-7350
- DOI
- 10.1002/admi.202201038
- project
- Development and Implementation of Ferroelectric oxides
- Ultra-fast thermal processing for next-generation ferroelectric hafnia
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2022 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH.
- id
- c75088eb-ec5a-4a1f-97e8-1f493d1e16c1
- date added to LUP
- 2022-09-08 13:21:45
- date last changed
- 2024-01-29 13:26:51
@article{c75088eb-ec5a-4a1f-97e8-1f493d1e16c1,
abstract = {{<p>Ferroelectric Hf<sub>x</sub>Zr<sub>1–x</sub>O<sub>2</sub> (HZO) is typically achieved by crystallization of an amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes. For integration on III–V semiconductors, this approach can severely degrade the sensitive HZO/III–V interface. To evaluate whether a reduced thermal budget can improve the interface quality, millisecond duration thermal anneals are utilized using a flash lamp annealer (FLA) on HZO/InAs capacitors. Through thorough electrical characterization such as polarization hysteresis, endurance, and capacitance-voltage measurements, as well as synchrotron-based chemical interface characterization, the FLA and RTP treatments are compared and the FLA results are found in lower interface defect density and higher endurance, but also have generally lower remanent polarization (P<sub>r</sub>) compared to RTP. Additionally, ways to achieve high P<sub>r</sub> and low interface defect density using multiple lower energy flashes, as well as by pre-crystallization during the ALD growth step are investigated. Using FLA, P<sub>r</sub> exceeding 20 µC cm<sup>−2</sup> is achieved, with extended endurance properties compared to RTP treatment and a considerably decreased defect density, indicative of a higher quality HZO/InAs interface. This work presents valuable insight into the successful integration of ferroelectric HZO on low thermal budget III–V semiconductors.</p>}},
author = {{Athle, Robin and Blom, Theodor and Irish, Austin and Persson, Anton E.O. and Wernersson, Lars Erik and Timm, Rainer and Borg, Mattias}},
issn = {{2196-7350}},
keywords = {{CMOS integration; ferroelectrics; hafnium oxide; III-V; thin films}},
language = {{eng}},
number = {{27}},
publisher = {{John Wiley & Sons Inc.}},
series = {{Advanced Materials Interfaces}},
title = {{Improved Endurance of Ferroelectric Hf<sub>x</sub>Zr<sub>1–x</sub>O<sub>2</sub> Integrated on InAs Using Millisecond Annealing}},
url = {{http://dx.doi.org/10.1002/admi.202201038}},
doi = {{10.1002/admi.202201038}},
volume = {{9}},
year = {{2022}},
}