Erik Lind
121 – 130 of 196
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2012
-
Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
- Contribution to journal › Article
-
Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
- Contribution to journal › Article
-
Mark
High-k oxides on InAs 100 and 111B surfaces
(2012) 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) 45(3). p.61-67
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
- Contribution to journal › Published meeting abstract
-
Mark
InAs Nanowires for High Frequency Electronics
(2012) GigaHertz Symposium 2012
- Contribution to conference › Abstract
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
(2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353
- Contribution to journal › Article
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
(2012) GigaHertz Symposium 2012
- Contribution to conference › Paper, not in proceeding
- 2011
-
Mark
Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
- Contribution to journal › Article
-
Mark
Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
- Contribution to journal › Article
-
Mark
60 GHz impulse radio measurements
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
