Erik Lind

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2014
Mark High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
Zota, Cezar ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
Zota, Cezar ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) In IEEE Electron Device Letters 35(3). p.342-344
- Contribution to journal › Article
Mark RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
Johansson, Sofia ^LU ; Memisevic, Elvedin ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
Zota, Cezar ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) 72nd Annual Device Research Conference (DRC) p.209-210
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark In GaAs MOSFETs with InP Drain
Mo, Jiongjiong ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2014) 72nd Annual Device Research Conference (DRC) p.119-120
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
Zota, Cezar ^LU ; Roll, Guntrade ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) In IEEE Transactions on Electron Devices 61(12). p.4078-4083
- Contribution to journal › Article
Mark Design of Radial Nanowire Tunnel Field-Effect Transistors
Dey, Anil ^LU ; Lind, Erik ^LU ; Svensson, Johannes ^LU ; Ek, M. ; Thelander, C. and Wernersson, Lars-Erik ^LU (2014) 72nd Annual Device Research Conference (DRC) p.81-82
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
Mo, Jiongjiong ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
Mo, Jiongjiong ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2014) In IEEE Electron Device Letters 35(5). p.515-517
- Contribution to journal › Article
Mark Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
Memisevic, Elvedin ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2014) In Journal of Vacuum Science and Technology B 32(5).
- Contribution to journal › Article

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