Vanya Darakchieva
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- 2023
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Mark
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
- Contribution to journal › Article
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Mark
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
- Contribution to journal › Article
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Mark
Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
- Contribution to journal › Article
- 2022
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Mark
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
- Contribution to journal › Article
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Mark
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
- Contribution to journal › Article
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Mark
Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
(2022) 2022 Compound Semiconductor Week, CSW 2022
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg
- Contribution to journal › Article
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Mark
Electrical Tuning of Plasmonic Conducting Polymer Nanoantennas
- Contribution to journal › Article
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Mark
The 2022 magneto-optics roadmap
- Contribution to journal › Scientific review
