Sebastian Lehmann
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- 2013
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Mark
Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires
- Contribution to journal › Article
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Mark
Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas
- Contribution to journal › Article
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Mark
A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow.
- Contribution to journal › Article
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Mark
Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.
- Contribution to journal › Article
-
Mark
A general approach for sharp crystal phase switching in InAs, GaAs, InP and GaP nanowires using only group V flow
(2013) 7th Nanowire growth workshop, 2013
- Contribution to conference › Abstract
-
Mark
III/V Nanodrähte
(2013) In DGKK
- Contribution to journal › Article
- 2012
-
Mark
High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
- Contribution to journal › Article
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Mark
Growth of InAs/InP core-shell nanowires with various pure crystal structures.
- Contribution to journal › Article
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Mark
Electronic properties of grain boundaries in Cu(In,Ga)Se-2 thin films with various Ga-contents
- Contribution to journal › Article
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Mark
Atomic Surface Structure and Electronic Properties of Semiconductor Nanowires Studied by Scanning Tunneling Microscopy and Spectroscopy
(2012) ICPS 2012
- Contribution to conference › Abstract
