Lars Samuelson
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- 2010
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Mark
Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy
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- Contribution to journal › Article
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Mark
Growth Mechanism of Self-Catalyzed Group III-V Nanowires.
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- Contribution to journal › Article
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Mark
III-V Nanowires-Extending a Narrowing Road
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- Contribution to journal › Article
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Mark
Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires.
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- Contribution to journal › Article
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Mark
Charge pumping in InAs nanowires by surface acoustic waves
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- Contribution to journal › Article
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Mark
In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
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- Contribution to journal › Article
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Mark
Determination of diffusion lengths in nanowires using cathodoluminescence
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- Contribution to journal › Article
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Mark
Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
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- Contribution to journal › Article
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Mark
Correlation-induced conductance suppression at level degeneracy in a quantum dot.
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- Contribution to journal › Article
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Mark
Low-temperature cathodoluminescence studies of GaAs nanowires in the SEM
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- Contribution to journal › Article