Magnus Borgström
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- 2012
-
Mark
Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.
- Contribution to journal › Article
-
Mark
Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
- Contribution to journal › Article
-
Mark
GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
(2012) MRS Fall Meeting, 2012
- Contribution to conference › Abstract
-
Mark
Radial InAs quantum structures grown on side-facets of InP nanowires
(2012) ICPS 2012
- Contribution to conference › Abstract
-
Mark
Nanowires with promise for solar energy harvesting
(2012) ICPS 2012
- Contribution to conference › Abstract
-
Mark
A comparative study of nanowire-based infrared p+-i-n+ photodetectors
(2012) ICPS 2012
- Contribution to conference › Abstract
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
(2012) GigaHertz Symposium 2012
- Contribution to conference › Paper, not in proceeding
-
Mark
Electron transport in Mn+ implanted GaAs nanowires
(2012) ICPS 2012
- Contribution to conference › Abstract
- 2011
-
Mark
Nanowires With Promise for Photovoltaics
- Contribution to journal › Article
-
Mark
Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate
- Contribution to journal › Article
