Lars-Erik Wernersson
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- 2009
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Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
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Mark
MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
(
- Contribution to journal › Article
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Mark
Fabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs
2009) Swedish System-on-Chip Conference, SSoCC '09(
- Contribution to conference › Abstract
- 2008
-
Mark
Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
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- Contribution to journal › Debate/Note/Editorial
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Mark
Development of a Vertical Wrap-Gated InAs FET
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- Contribution to journal › Article
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Mark
Heterogeneous integration of InAs on W/GaAs by MOVPE
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042043-042043(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
III/V Nanowire FETs for CMOS?
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Characterization of GaSb nanowires grown by MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article