High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
Dey, Anil LU ; Borg, Mattias LU
; Ganjipour, Bahram
LU
; Ek, Martin
LU
; Dick Thelander, Kimberly
LU
; Lind, Erik
LU
; Nilsson, Peter
LU
; Thelander, Claes
LU
and Wernersson, Lars-Erik
LU
(2012)
70th Annual Device Research Conference (DRC)
p.205-206
- Abstract
- Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest
due to their potential for low power operation at room temperature. The devices are based on inter-band
tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse
the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band
tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density
(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb
heterostructure nanowires to operate as TFETs. We... (More) - Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest
due to their potential for low power operation at room temperature. The devices are based on inter-band
tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse
the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band
tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density
(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb
heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb
nanowire TFETs, which exhibit record-high on-current levels. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3127465
- author
- Dey, Anil
LU
; Borg, Mattias
LU
; Ganjipour, Bahram
LU
; Ek, Martin
LU
; Dick Thelander, Kimberly
LU
; Lind, Erik
LU
; Nilsson, Peter
LU
; Thelander, Claes
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2012
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Tunneling Field-Effect Transistors, Broken gap, InAs, GaSb
- host publication
- Device research conference
- pages
- 205 - 206
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 70th Annual Device Research Conference (DRC)
- conference dates
- 2012-06-18
- external identifiers
-
- scopus:84866914447
- ISSN
- 1548-3770
- DOI
- 10.1109/DRC.2012.6257038
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 9742efbb-f9c0-4784-b3e8-1a90d4d8cf75 (old id 3127465)
- date added to LUP
- 2016-04-01 13:20:58
- date last changed
- 2023-09-02 22:23:09
@inproceedings{9742efbb-f9c0-4784-b3e8-1a90d4d8cf75,
abstract = {{Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest <br/><br>
due to their potential for low power operation at room temperature. The devices are based on inter-band <br/><br>
tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse <br/><br>
the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band <br/><br>
tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density <br/><br>
(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb <br/><br>
heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb <br/><br>
nanowire TFETs, which exhibit record-high on-current levels.}},
author = {{Dey, Anil and Borg, Mattias and Ganjipour, Bahram and Ek, Martin and Dick Thelander, Kimberly and Lind, Erik and Nilsson, Peter and Thelander, Claes and Wernersson, Lars-Erik}},
booktitle = {{Device research conference}},
issn = {{1548-3770}},
keywords = {{Tunneling Field-Effect Transistors; Broken gap; InAs; GaSb}},
language = {{eng}},
pages = {{205--206}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
title = {{High Current Density InAsSb/GaSb Tunnel Field Effect Transistors}},
url = {{https://lup.lub.lu.se/search/files/3313739/3128556.pdf}},
doi = {{10.1109/DRC.2012.6257038}},
year = {{2012}},
}