Advanced

High Current Density InAsSb/GaSb Tunnel Field Effect Transistors

Dey, Anil LU ; Borg, Mattias LU ; Ganjipour, Bahram LU ; Ek, Martin LU ; Dick Thelander, Kimberly LU ; Lind, Erik LU ; Nilsson, Peter LU ; Thelander, Claes LU and Wernersson, Lars-Erik LU (2012) 70th Annual Device Research Conference (DRC) In Device research conference p.205-206
Abstract
Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest

due to their potential for low power operation at room temperature. The devices are based on inter-band

tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse

the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band

tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density

(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb

heterostructure nanowires to operate as TFETs. We... (More)
Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest

due to their potential for low power operation at room temperature. The devices are based on inter-band

tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse

the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band

tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density

(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb

heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb

nanowire TFETs, which exhibit record-high on-current levels. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Tunneling Field-Effect Transistors, Broken gap, InAs, GaSb
in
Device research conference
pages
205 - 206
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
70th Annual Device Research Conference (DRC)
external identifiers
  • scopus:84866914447
ISSN
1548-3770
DOI
10.1109/DRC.2012.6257038
language
English
LU publication?
yes
id
9742efbb-f9c0-4784-b3e8-1a90d4d8cf75 (old id 3127465)
date added to LUP
2012-10-11 14:04:40
date last changed
2017-06-04 03:54:08
@inproceedings{9742efbb-f9c0-4784-b3e8-1a90d4d8cf75,
  abstract     = {Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest <br/><br>
due to their potential for low power operation at room temperature. The devices are based on inter-band <br/><br>
tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse <br/><br>
the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band <br/><br>
tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density <br/><br>
(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb <br/><br>
heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb <br/><br>
nanowire TFETs, which exhibit record-high on-current levels.},
  author       = {Dey, Anil and Borg, Mattias and Ganjipour, Bahram and Ek, Martin and Dick Thelander, Kimberly and Lind, Erik and Nilsson, Peter and Thelander, Claes and Wernersson, Lars-Erik},
  booktitle    = {Device research conference},
  issn         = {1548-3770},
  keyword      = {Tunneling Field-Effect Transistors,Broken gap,InAs,GaSb},
  language     = {eng},
  pages        = {205--206},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {High Current Density InAsSb/GaSb Tunnel Field Effect Transistors},
  url          = {http://dx.doi.org/10.1109/DRC.2012.6257038},
  year         = {2012},
}