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- 2013
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Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
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Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
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Mark
Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Aerosol synthesis of semiconductor nanowires
2013) European Aerosol Conference (EAC) 2013(
- Contribution to conference › Abstract
- 2012
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
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Mark
Single InAs/GaSb Nanowire Low-Power CMOS Inverter
2012) In Nano Letters(
- Contribution to journal › Article
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Mark
Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
(
- Contribution to journal › Article
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Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
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Mark
Optimizing Substrate-Mediated Plasmon Coupling toward High-Performance Plasmonic Nanowire Waveguides
(
- Contribution to journal › Article
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Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical oxide nanotubes connected by subsurface microchannels
(
- Contribution to journal › Article
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Mark
Electron Tunneling and Field-Effect Devices in mm-Wave Circuits
2012)(
- Thesis › Doctoral thesis (compilation)
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Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
- 2011
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
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Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
(
- Contribution to journal › Article
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Mark
Dual-gate induced InP nanowire diode
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Atomistic study of the buckling of gold nanowires
(
- Contribution to journal › Article
-
Mark
Nanowire based electrodes for in vivo neuronal signal recordings
2011) RusNanoTech Nanotechnology International Forum(
- Contribution to conference › Abstract