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- 2013
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Mark
GaSb nanowire pFETs for III-V CMOS
2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14(
- Contribution to journal › Published meeting abstract
- 2012
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
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Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
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Mark
1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
(
- Contribution to journal › Article
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Mark
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
(
- Contribution to journal › Article
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Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
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Mark
Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
(
- Contribution to journal › Article
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Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
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Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(
- Contribution to journal › Article
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Mark
High-k oxides on InAs 100 and 111B surfaces
2012) 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) 45(3). p.61-67(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
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Mark
InAs Nanowires for High Frequency Electronics
2012) GigaHertz Symposium 2012(
- Contribution to conference › Abstract
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Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
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Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article