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- 2020
-
Mark
Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2019
-
Mark
Trap-aware compact modeling and power-performance assessment of III-V tunnel FET
2019) 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon
2019) 92nd ARFTG Microwave Measurement Conference, ARFTG 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays : Digital and Analog Figures of Merit from 300K to 10K
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
-
Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
2017) 75th Annual Device Research Conference, DRC 2017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InGaAs tri-gate MOSFETs with record on-current
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A transmission line model for co-designed slot-coupled dielectric resonator antennas
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
(
- Contribution to journal › Article
-
Mark
InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
(
- Contribution to journal › Article
-
Mark
3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
(
- Contribution to journal › Article
-
Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
(
- Contribution to journal › Article
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
-
Mark
Single suspended InGaAs nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
- 2015
-
Mark
Time-Domain System for Millimeter-Wave Material Characterization
(
- Contribution to journal › Article
-
Mark
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
(
- Contribution to journal › Article
-
Mark
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
(
- Contribution to journal › Article
-
Mark
Narrow gap nanowires: From nanotechnology to RF-circuits on Si
(
- Contribution to journal › Article
- 2014
-
Mark
Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
(
- Contribution to journal › Article
-
Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
(
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
(
- Contribution to journal › Article
-
Mark
In GaAs MOSFETs with InP Drain
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
(
- Contribution to journal › Article
-
Mark
Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
(
- Contribution to journal › Article
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Monolithically-Integrated Millimetre-Wave Wavelet Transmitter With On-Chip Antenna
(
- Contribution to journal › Article
-
Mark
Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design of Radial Nanowire Tunnel Field-Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
(
- Contribution to journal › Article
-
Mark
Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
-
Mark
III-V compound semiconductor transistors-from planar to nanowire structures
(
- Contribution to journal › Article
-
Mark
Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
(
- Contribution to journal › Article
-
Mark
Wideband Extraction of Material Parameters in the Mm-Wave Regime
(
- Contribution to conference › Abstract
-
Mark
Lessons from Ten Years of the International Master’s Program in System-on-Chip
2014) The 10th European Workshop on Microelectronics Education (EWME 2014)(
- Contribution to conference › Paper, not in proceeding
-
Mark
Complex Permittivity Extraction Using a Leaky-Lens Antenna System
2014) Progress in Electromagnetics Research Symposium (PIERS), 2014(
- Contribution to conference › Abstract
-
Mark
Time Domain Material Characterizations Using Leaky Lens Antennas
(
- Contribution to conference › Abstract
- 2013
-
Mark
Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
Pulse transmission using leaky lens antenna and RTD-MOSFET wavelet generator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration
(
- Contribution to journal › Article
-
Mark
Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
(
- Contribution to journal › Article
-
Mark
1/f-noise in Vertical InAs Nanowire Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
-
Mark
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
(
- Contribution to journal › Article
-
Mark
Wideband and Non-Dispersive Wavelet Transmission using Leaky Lens Antenna
(
- Contribution to journal › Article
-
Mark
GaSb nanowire pFETs for III-V CMOS
2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14(
- Contribution to journal › Published meeting abstract
- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
-
Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
-
Mark
1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
(
- Contribution to journal › Article
-
Mark
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
(
- Contribution to journal › Article
-
Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
-
Mark
Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
(
- Contribution to journal › Article
-
Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
-
Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(
- Contribution to journal › Article
-
Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-k oxides on InAs 100 and 111B surfaces
2012) 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) 45(3). p.61-67(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
InAs Nanowires for High Frequency Electronics
2012) GigaHertz Symposium 2012(
- Contribution to conference › Abstract
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
-
Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
-
Mark
Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
(
- Contribution to journal › Article
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
-
Mark
Impulse-based 4 Gbit/s radio link at 60 GHz
(
- Contribution to journal › Article
-
Mark
60 GHz impulse radio measurements
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Transient studies on InAs/HfO2 nanowire capacitors
(
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
-
Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
-
Mark
Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
2011) IEEE International Electron Devices Meeting (IEDM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
2011) Swedish System-on-Chip Conference, SSoCC 2011(
- Contribution to conference › Paper, not in proceeding
- 2010
-
Mark
Coherent V-Band Pulse Generator for Impulse Radio BPSK
(
- Contribution to journal › Article
-
Mark
Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
(
- Contribution to journal › Article
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
-
Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
-
Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
-
Mark
Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
(
- Contribution to journal › Article
-
Mark
Modelling and optimization of III/V transistors with matrices of nanowires
(
- Contribution to journal › Article
-
Mark
Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Tunneling-based devices and circuits
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A 12.5 Gpulses/s 60 GHz bi-phase wavelet generator
2010) 34th International European Workshop on Compound Semiconductor Devices and Integrated Circuits(
- Contribution to conference › Abstract
-
Mark
Oscillator for 60 GHz Super Regenerative Receiver
(
- Contribution to journal › Published meeting abstract
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Contribution to journal › Published meeting abstract
-
Mark
A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
High-k oxides on (100), (111)A and (111)B InAs substrates
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
-
Mark
Analysis of InAs/HfO2 nanowire CV characteristics
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Gated tunnel diode in oscillator applications with high frequency tuning
(
- Contribution to journal › Article
-
Mark
Deposition of HfO2 on InAs by atomic-layer deposition
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
20 GHz gated tunnel diode based UWB pulse generator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
20 GHz Wavelet Generator Using a Gated Tunnel Diode
(
- Contribution to journal › Article
-
Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Ultra-Wideband Impulse Radio Transmitter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs
2009) Swedish System-on-Chip Conference, SSoCC '09(
- Contribution to conference › Abstract
-
Mark
Design and manufacturing of a dielectric resonator antenna for impulse radio at 60 GHz
(
- Contribution to conference › Paper, not in proceeding
- 2008
-
Mark
GaAs/GaSb nanowire heterostructures grown by MOVPE
(
- Contribution to journal › Article
-
Mark
InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042017-042017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Drive current and threshold voltage control in vertical InAs wrap-gate transistors
(
- Contribution to journal › Article
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
-
Mark
Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
(
- Contribution to journal › Debate/Note/Editorial
-
Mark
Gated tunnel diode pulse generator
2008) GigaHertz Symposium In Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology p.37-37(
- Contribution to journal › Published meeting abstract
-
Mark
Development of a Vertical Wrap-Gated InAs FET
(
- Contribution to journal › Article
-
Mark
Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
(
- Contribution to journal › Debate/Note/Editorial
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article
-
Mark
Characterization of GaSb nanowires grown by MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Heterogeneous integration of InAs on W/GaAs by MOVPE
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042043-042043(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
III/V Nanowire FETs for CMOS?
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Heterostructure Barriers in Wrap Gated Nanowire FETs
(
- Contribution to journal › Article
- 2007
-
Mark
Nanowire field-effect transistor
(
- Contribution to journal › Article
-
Mark
InAs WRAP-gate nanowire transistors
2007) IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials p.527-529(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High Tuning-Range VCO Using a Gated Tunnel Diode
2007) 2007 International Conference on Solid State Materials and Devices In [Publication information missing] p.798-799(
- Contribution to journal › Published meeting abstract
-
Mark
Electron microscopy studies of nanowires
2007) Aminoff Symp: Carbon nanotubes - with an eye on the nanoworld, 2007(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Pulse Generator with Gated Tunnel Diode
2007) Swedish System-on-Chip Conference 2007 (SSoCC’07)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-performance InAs NW MISFETs
2007) 8th Sweden-Japan Intl Workshop on Quantum Nanoelectronics, 2007(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2006
-
Mark
InAs wrap-gate FETs
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical high-mobility wrap-gated InAs nanowire transistor
(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire wrap-gate FETs
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanowire transistors: fabrication, performance and applications
2006) Intl Workshop Challenges and Opportunities in Nanoarchitectures, Halmstad, Sweden (2006), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanowire field effect transistor
2006) Intl Conf on Solid State Devices and Materials, Kanagawa, Japan (2006), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAsP/InAs nanowire heterostructure field effect transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical high mobility wrap-gated InAs nanowire transistors
2006) 63rd Annual Device Res Conf, Santa Barbara, Ca, USA (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
-
Mark
A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
(
- Contribution to journal › Article
-
Mark
InAs epitaxial lateral overgrowth of W masks
(
- Contribution to journal › Article
-
Mark
Vertical high mobility wrap-gated InAs nanowire transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Wrap-gated InAs nanowire field-effect transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
MOVPE of InAs epitaxial overgrowth of W masks
2005) 12 Intl Conf on Narrow Gap Semiconductors, Toulouse, France (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Gated tunnel diodes in nanoelectronic pulse generators
2005) Sweden-Japan Intl Workshop on Quantum Nano-Physics and Electronics, (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Nanoelectronic pulse generators based on gated resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
(
- Contribution to journal › Article
-
Mark
Design of resonant tunneling permeable base transistors
2004) 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings p.158-163(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Resonant tunneling permeable base transistors with high transconductance
(
- Contribution to journal › Article
-
Mark
3D metal-semiconductor devices and other nanoelectronic devices
2004) NSF/SSF Workshop on Nanoscience and Nanotechnology, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Resonant tunneling permeable base transistor based pulsed oscillator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanoelectronic pulse generators for UWB applications
2004) 1st Sweden-Korea Nano-Workshop, Seoul, Korea (2004), invvited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Resonant tunneling permeable base transistor based pulsed oscillator
2004) Intl Semicond Dev Res Symp, (2004)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2003
-
Mark
InP hot electron transistors with a buried metal gate
(
- Contribution to journal › Article
-
Mark
Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
(
- Contribution to journal › Article
-
Mark
Highly functional tunnelling devices integrated in 3D
(
- Contribution to journal › Article
-
Mark
Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
(
- Contribution to journal › Article
-
Mark
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
(
- Contribution to journal › Article
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Mark
Tunneling spectroscopy of a quantum dot through a single impurity
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- Contribution to journal › Article
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Mark
Resonant Tunneling Permeable Base Transistor for RF applications
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2002
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Mark
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
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- Contribution to journal › Article
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Mark
Nanoscale tungsten aerosol particles embedded in GaAs
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- Contribution to journal › Article
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Mark
Three-dimensional integrated resonant tunneling transistor with multiple peaks
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- Contribution to journal › Article
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Mark
Carrier dynamics around nano-scale Schottky contacts: a femtosecond near-field study
(
- Contribution to journal › Article
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Mark
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
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- Contribution to journal › Article
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Mark
A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
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- Contribution to journal › Article
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Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
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- Contribution to journal › Article
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Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
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- Contribution to journal › Article
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Mark
Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
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- Contribution to journal › Article
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Mark
Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field
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- Contribution to journal › Article
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Mark
Designed emitter states in resonant tunneling through quantum dots
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- Contribution to journal › Article
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Mark
Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics
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- Contribution to journal › Article
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Mark
Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
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- Contribution to journal › Article
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Mark
Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Circuits and devices with integrated VFETs and RTDs
2002) p.205-208(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Coupling between lateral modes in a vertical resonant tunneling structure
(
- Contribution to journal › Article
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Mark
A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
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- Contribution to journal › Article
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Mark
A resonant tunneling permeable base transistor with Al-free tunneling barriers
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 1998
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Mark
Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications
1998)(
- Thesis › Doctoral thesis (compilation)