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2025
Mark Simulating Scaling Effects in Fully Vertical GaN FinFETs
Simko, Alexander ; Garigapati, Navya Sri ^LU ; Logotheti, Adamantia ^LU ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2025) In Physica Status Solidi (A) Applications and Materials Science 222(23).
- Contribution to journal › Article
Mark Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Logotheti, Adamantia ^LU ; Garigapati, Navya Sri ^LU ; So, Byeongchan ^LU ; Colvin, Jovana ^LU ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2025) In Physica Status Solidi. A: Applications and Materials Science 222(21).
- Contribution to journal › Article
2023
Mark Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
Olausson, Patrik ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(11). p.5614-5618
- Contribution to journal › Article
Mark 8-band k · p modeling of strained In_xGa_(1-x)As/InP heterostructure nanowires
Garigapati, Navya Sri ^LU and Lind, Erik ^LU (2023) In Journal of Applied Physics 133(1).
- Contribution to journal › Article
Mark Low temperature atomic hydrogen annealing of InGaAs MOSFETs
Olausson, Patrik ^LU ; Yadav, Rohit ^LU ; Timm, Rainer ^LU and Lind, Erik ^LU (2023) In Semiconductor Science and Technology 38(5).
- Contribution to journal › Article
Mark Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
Winge, David ^LU ; Borgström, Magnus ^LU ; Lind, Erik ^LU and Mikkelsen, Anders ^LU (2023) In Neuromorphic Computing and Engineering 3(3).
- Contribution to journal › Article
Mark Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(5). p.2408-2414
- Contribution to journal › Article
Mark Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(8). p.4101-4107
- Contribution to journal › Article
Mark Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
Svensson, Johannes ^LU ; Olausson, Patrik ^LU ; Menon, Heera ^LU ; Lehmann, Sebastian ^LU ; Lind, Erik ^LU and Borg, Mattias ^LU (2023) In Nano Letters 23(11). p.4756-4761
- Contribution to journal › Article
Mark Time evolution of surface species during the ALD of high-k oxide on InAs
D'Acunto, Giulio ^LU ; Shayesteh, Payam ^LU ; Kokkonen, Esko ^LU ; Boix de la Cruz, Virginia ^LU ; Rehman, Foqia ^LU ; Mosahebfard, Zohreh ; Lind, Erik ^LU ; Schnadt, Joachim ^LU and Timm, Rainer ^LU (2023) In Surfaces and Interfaces 39(102927).
- Contribution to journal › Article

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