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- 2024
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Mark
Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
(
- Contribution to journal › Article
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Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
(
- Contribution to journal › Article
- 2023
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Mark
High-quality N-polar GaN optimization by multi-step temperature growth process
(
- Contribution to journal › Article
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Mark
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
(
- Contribution to journal › Article
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article
- 2022
-
Mark
Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg
(
- Contribution to journal › Article
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Mark
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
(
- Contribution to journal › Article
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Mark
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
(
- Contribution to journal › Article
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Mark
Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect
(
- Contribution to journal › Article
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Mark
Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding