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- 2024
-
Mark
Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
(
- Contribution to journal › Article
-
Mark
Hot Carrier Nanowire Transistors at the Ballistic Limit
(
- Contribution to journal › Article
-
Mark
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
(
- Contribution to journal › Article
- 2023
-
Mark
Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
(
- Contribution to journal › Article
-
Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
(
- Contribution to journal › Article
-
Mark
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
(
- Contribution to journal › Article
-
Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article
- 2022
-
Mark
Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
(
- Contribution to journal › Article
-
Mark
Epitaxial growth of
β
-Ga
2
O
3
by hot-wall MOCVD
(
- Contribution to journal › Article