1 – 10 of 17
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2019
-
Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
- Contribution to journal › Article
-
Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- Contribution to journal › Article
- 2018
-
Mark
Towards Nanowire Tandem Junction Solar Cells on Silicon
- Contribution to journal › Article
- 2017
-
Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
- Contribution to journal › Article
-
Mark
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
- Contribution to journal › Article
-
Mark
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
- Contribution to journal › Article
- 2016
-
Mark
Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
- Contribution to journal › Article
-
Mark
III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon
(2016) 11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2 : Simulation Study of the Impact of Interface Traps
- Contribution to journal › Article
