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2024
Mark Determination of the conduction and valence band offsets at the Co₃O₄/3C-SiC p-n heterojunction
Zeng, Hui ; Wang, Weimin ^LU ; Ivanov, Ivan G. ; Darakchieva, Vanya ^LU and Sun, Jianwu (2024) In Applied Physics Letters 125(16).
- Contribution to journal › Article
Mark Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Vidarsson, A. M. ; Persson, A. R. ; Chen, J. T. ^LU ; Haasmann, D. ; Hassan, J. ; Dimitrijev, S. ; Rorsman, N. ; Darakchieva, V. ^LU and Sveinbjörnsson, E. (2024) 358. p.59-64
- Chapter in Book/Report/Conference proceeding › Book chapter
Mark Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
Hult, Björn ; Bergsten, Johan ; Ferrand-Drake Del Castillo, Ragnar ; Darakchieva, Vanya ^LU ; Malmros, Anna ; Hjelmgren, Hans ; Thorsell, Mattias and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(12). p.7383-7389
- Contribution to journal › Article
Mark Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
Papamichail, A. ; Persson, A. R. ; Richter, S. ^LU ; Stanishev, V. ^LU ; Armakavicius, N. ; Kühne, P. ; Guo, S. ; Persson, P. O.I. ; Paskov, P. P. and Rorsman, N. , et al. (2024) In Applied Physics Letters 125(12).
- Contribution to journal › Article
2023
Mark Low Al-content n-type Al_xGa_1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Stanishev, Vallery ; Armakavicius, Nerijus ; Gogova, Daniela ; Nawaz, Muhammad ; Rorsman, Niklas ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Vacuum 217.
- Contribution to journal › Article
Mark Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Vidarsson, Arnar M. ; Persson, Axel R. ; Chen, Jr Tai ; Haasmann, Daniel ; Hassan, Jawad Ul ; Dimitrijev, Sima ; Rorsman, Niklas ; Darakchieva, Vanya ^LU and Sveinbjörnsson, Einar I. (2023) In APL Materials 11(11).
- Contribution to journal › Article
Mark Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in Al_xGa_1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
Knight, Sean ^LU ; Richter, Steffen ^LU ; Papamichail, Alexis ; Kühne, Philipp ; Armakavicius, Nerijus ; Guo, Shiqi ; Persson, Axel R. ; Stanishev, Vallery ; Rindert, Viktor ^LU and Persson, Per O.Å. , et al. (2023) In Journal of Applied Physics 134(18).
- Contribution to journal › Article
Mark Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Persson, Axel R. ; Gustafsson, Anders ^LU ; Bi, Zhaoxia ^LU ; Samuelson, Lars ^LU ; Darakchieva, Vanya ^LU and Persson, Per O.Å. (2023) In Applied Physics Letters 123(2).
- Contribution to journal › Article
Mark Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
Papamichail, A. ; Persson, A. R. ^LU ; Richter, S. ^LU ; Kühne, P. ^LU ; Stanishev, V. ; Persson, P. O.Å. ^LU ; Ferrand-Drake Del Castillo, R. ; Thorsell, M. ; Hjelmgren, H. and Paskov, P. P. , et al. (2023) In Applied Physics Letters 122(15).
- Contribution to journal › Article
Mark High-quality N-polar GaN optimization by multi-step temperature growth process
Zhang, Hengfang ; Chen Jr., Tai ; Papamichail, Alexis ; Persson, Ingemar ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Journal of Crystal Growth 603.
- Contribution to journal › Article

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