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- 2024
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Mark
Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction
- Contribution to journal › Article
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Mark
Effective uniaxial dielectric function tensor and optical phonons in (2 ¯ 01)-oriented β - Ga2 O3 films with equally distributed sixfold-rotation domains
- Contribution to journal › Article
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Mark
Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
- Contribution to journal › Article
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Mark
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
- Contribution to journal › Article
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Mark
Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
- Contribution to journal › Article
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Mark
Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
- Contribution to journal › Article
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Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
- Contribution to journal › Article
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Mark
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
- Contribution to journal › Article
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Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
- Contribution to journal › Article
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Mark
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
- Contribution to journal › Article
