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- 2022
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Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
- Contribution to journal › Article
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Mark
Advantages of binary stochastic synapses for hardware spiking neural networks with realistic memristors
- Contribution to journal › Article
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
- Contribution to journal › Article
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Mark
Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth
- Contribution to journal › Article
- 2021
-
Mark
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
- Contribution to journal › Article
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Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
- Contribution to journal › Article
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Mark
Improved quality of InSb-on-insulator microstructures by flash annealing into melt
- Contribution to journal › Article
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Mark
Optimization of Near-Surface Quantum Well Processing
- Contribution to journal › Article
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Mark
Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2) : Raman spectroscopy and magnetic properties
- Contribution to journal › Article
- 2020
-
Mark
Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
- Contribution to journal › Article
