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2016
Mark Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
Berg, Martin ^LU ; Kilpi, Olli-Pekka ^LU ; Persson, Karl-Magnus ^LU ; Svensson, Johannes ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Electron Device Letters 37(8). p.966-969
- Contribution to journal › Letter
Mark Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
Berg, Martin ^LU ; Persson, Karl-Magnus ^LU ; Kilpi, Olli-Pekka ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) 61st IEEE International Electron Devices Meeting, IEDM 2015 2016-February.
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2014
Mark Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
Berg, Martin ^LU ; Persson, Karl-Magnus ^LU ; Lind, Erik ^LU ; Sjöland, Henrik ^LU and Wernersson, Lars-Erik ^LU (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark InAs nanowire MOSFET differential active mixer on Si-substrate
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Sjöland, Henrik ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2014) In Electronics Letters 50(9). p.682-682
- Contribution to journal › Article
Mark InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
Berg, Martin ^LU ; Persson, Karl-Magnus ^LU ; Wu, Jun ^LU ; Lind, Erik ^LU ; Sjöland, Henrik ^LU and Wernersson, Lars-Erik ^LU (2014) In Nanotechnology 25(48).
- Contribution to journal › Article
2013
Mark Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Wu, Jun ^LU ; Johansson, Sofia ^LU ; Svensson, Johannes ^LU ; Jansson, Kristofer ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2013) In IEEE Transactions on Electron Devices 60(9). p.2761-2767
- Contribution to journal › Article
Mark A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
Johansson, Sofia ^LU ; Berg, Martin ^LU ; Persson, Karl-Magnus ^LU and Lind, Erik ^LU (2013) In IEEE Transactions on Electron Devices 60(2). p.776-781
- Contribution to journal › Article
Mark 1/f-noise in Vertical InAs Nanowire Transistors
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2013) 25th International Conference on Indium Phosphide and Related Materials (IPRM) p.1-2
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2012
Mark Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Wu, Jun ^LU ; Sjöland, Henrik ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) Device Research Conference (DRC), 2012 70th Annual In IEEE Electron Device Letters p.195-196
- Contribution to journal › Published meeting abstract
Mark High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Ärlelid, Mats ^LU ; Persson, Karl-Magnus ^LU ; Borg, Mattias ^LU ; Lenrick, Filip ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Electron Device Letters 33(3). p.369-371
- Contribution to journal › Article

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