1 – 5 of 5
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2018
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars Erik
LU
(2018)
In IEEE Electron Device Letters
39(7).
p.1089-1091
- Contribution to journal › Article
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2018)
In IEEE Electron Device Letters
39(7).
p.943-946
- Contribution to journal › Letter
- 2017
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Memisevic, Elvedin LU ; Hellenbrand, Markus LU ; Lind, Erik LU
; Persson, Axel
LU
; Sant, Saurabh
; Schenk, Andreas
; Svensson, Johannes
LU
; Wallenberg, Reine
LU
and Wernersson, Lars-Erik
LU
(2017)
In Nano Letters
- Contribution to journal › Letter
- 2016
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
Memisevic, Elvedin LU ; Svensson, Johannes LU ; Hellenbrand, Markus LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2016)
In IEEE Electron Device Letters
37(5).
p.549-552
- Contribution to journal › Letter
- 2013
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
Dey, Anil LU ; Svensson, Johannes LU ; Ek, Martin LU
; Lind, Erik
LU
; Thelander, Claes
LU
and Wernersson, Lars-Erik
LU
(2013)
In Nano Letters
13(12).
p.5919-5924
- Contribution to journal › Article