1 – 9 of 9
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2020
-
Mark
Electrical Characterisation of III-V Nanowire MOSFETs
(2020) In Series of Licentiate and Doctoral Theses
- Thesis › Doctoral thesis (compilation)
- 2018
-
Mark
Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
(2018) 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 2018-March. p.1-2
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
- Contribution to journal › Letter
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
- Contribution to journal › Article
- 2017
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
(2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
(2017) In Nano Letters
- Contribution to journal › Letter
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
(2017)
- Thesis › Doctoral thesis (compilation)
- 2016
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
- Contribution to journal › Letter
- 2013
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
- Contribution to journal › Article
