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2025
Mark Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(0001̄)
Zhang, Hengfang ; Chen, Jr Tai ; Papamichail, Alexis ; Persson, Ingemar ; Tran, Dat Q. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2025) In Journal of Crystal Growth 651.
- Contribution to journal › Article
Mark Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy
Pingen, Katrin ; Wolff, Niklas ; Hinz, Alexander M. ; Sandström, Per ; Beuer, Susanne ; Kienle, Lorenz ; Darakchieva, Vanya ^LU ; Hultman, Lars ; Birch, Jens and Hsiao, Ching Lien (2025) In Applied Surface Science Advances 26.
- Contribution to journal › Article
Mark High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr³⁺ in β-Ga₂O₃
Rindert, Viktor ^LU ; Galazka, Zbigniew ; Schubert, Mathias ^LU and Darakchieva, Vanya ^LU (2025) In Applied Physics Letters 126(8).
- Contribution to journal › Article
Mark Magnetic Lyddane-Sachs-Teller Relation
Rindert, Viktor ^LU ; Darakchieva, Vanya ^LU ; Sarkar, Tapati and Schubert, Mathias ^LU (2025) In Physical Review Letters 134(8).
- Contribution to journal › Article
2024
Mark Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
Knight, Sean ^LU ; Richter, Steffen ^LU ; Papamichail, Alexis ; Stokey, Megan ; Korlacki, Rafał ; Stanishev, Vallery ; Kühne, Philipp ; Schubert, Mathias ^LU and Darakchieva, Vanya ^LU (2024) In Applied Physics Letters 124(3).
- Contribution to journal › Article
Mark Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels
Kuang, Chaoyang ; Chen, Shangzhi ; Luo, Min ; Zhang, Qilun ; Sun, Xiao ; Han, Shaobo ; Wang, Qingqing ; Stanishev, Vallery ; Darakchieva, Vanya ^LU and Crispin, Reverant , et al. (2024) In Advanced Science 11(3).
- Contribution to journal › Article
Mark Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
Gustafsson, Anders ^LU ; Persson, Axel R. ; Persson, Per O.Å. ; Darakchieva, Vanya ^LU ; Bi, Zhaoxia ^LU and Samuelson, Lars ^LU (2024) In Nanotechnology 35(25).
- Contribution to journal › Article
Mark Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
Armakavicius, Nerijus ; Kühne, Philipp ; Papamichail, Alexis ; Zhang, Hengfang ; Knight, Sean ^LU ; Persson, Axel ; Stanishev, Vallery ; Chen, Jr Tai ; Paskov, Plamen and Schubert, Mathias ^LU , et al. (2024) In Materials 17(13).
- Contribution to journal › Article
Mark Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
Sundarapandian, Balasubramanian ; Tran, Dat Q. ; Kirste, Lutz ; Straňák, Patrik ; Graff, Andreas ; Prescher, Mario ; Nair, Akash ; Raghuwanshi, Mohit ; Darakchieva, Vanya ^LU and Paskov, Plamen P. , et al. (2024) In Applied Physics Letters 124(18).
- Contribution to journal › Article
Mark Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
Castillo, Ragnar Ferrand Drake Del ; Chen, Ding Yuan ; Chen, Jr Tai ; Thorsell, Mattias ; Darakchieva, Vanya ^LU and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(6). p.3596-3602
- Contribution to journal › Article

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