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- 2024
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
(
- Contribution to journal › Article
-
Mark
A Reconfigurable Ferroelectric Transistor as An Ultra-Scaled Cell for Low-Power In-Memory Data Processing
2024) In Advanced Electronic Materials(
- Contribution to journal › Article
-
Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
- 2023
-
Mark
Sensing single domains and individual defects in scaled ferroelectrics
(
- Contribution to journal › Article
-
Mark
gm/Id Analysis of vertical nanowire III–V TFETs
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article
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Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
-
Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
(
- Contribution to journal › Article
- 2022
-
Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
(
- Contribution to journal › Article