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- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs Nanowires for High Frequency Electronics
2012) GigaHertz Symposium 2012(
- Contribution to conference › Abstract
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
-
Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
-
Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
-
Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article