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- 2024
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Mark
Gate-controlled near-surface Josephson junctions
(
- Contribution to journal › Article
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Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
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Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
(
- Contribution to journal › Article
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Mark
Demonstrating reconfigurability in water-based electromagnetic devices using a 3D-printed siphon
(
- Contribution to journal › Article
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
(
- Contribution to journal › Article
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Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
(
- Contribution to journal › Article
- 2023
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Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-k/InGaAs interface defects at cryogenic temperature
(
- Contribution to journal › Article
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Mark
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding